sot-23 plastic-encapsulate transistors s9015 transistor (pnp) features z complementary to s9014 marking: m6 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.1 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -0.1ma, i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-5v, i c = -1ma 200 1000 collector-emitter saturation voltage v ce (sat) i c =-100ma, i b = -10ma -0.3 v base-emitter saturation voltage v be (sat) i c =-100ma, i b =-10ma -1 v transition frequency f t v ce =-5v, i c = -10ma f= 30mhz 150 mhz classification of h fe rank l h range 200-450 450-1000 so t -23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.1 -1 -10 1 10 -0.1 -1 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 -0 -2 -4 -6 -8 -0 -2 -4 -6 -8 -0.1 -1 -10 -100 10 100 1000 -1 -10 -100 -0.1 -1 -0.0 -0.3 -0.6 -0.9 -1.2 -0.1 -1 -10 -100 -1 -10 -100 -0.01 -0.1 -1 -20 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v r (v) 30 common emitter v ce =-5v t a =25 transition frequency f t (mhz) collector current i c (ma) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) -6ua -8ua -10ua -12ua -16ua -20ua -18ua -14ua common emitter t a =25 -4ua i b =-2ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) common emitter v ce = -5v i c t a =25 t a =100 dc current gain h fe collector current i c (ma) -0.2 -0.2 i c f t ?? h fe ?? =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) -2 common emitter v ce =-5v s9015 v be i c ?? t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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